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FMOSB245N10-H

FMOSB245N10-H

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FMOSB245N10-H

Package: TO-263; Type: N MOS; BVDSS (V): 100; ID (A): 245; PD (W): 284; EAS (mJ): 211; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.7m; RDSON1 Max.(Ω): 3.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 7424; Qg Typ.(nC): 123.6; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-263; Type: N MOS; BVDSS (V): 100; ID (A): 245; PD (W): 284; EAS (mJ): 211; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.7m; RDSON1 Max.(Ω): 3.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 7424; Qg Typ.(nC): 123.6; AEC-Q101 Qualified; No

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Formosa Microsemi
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