Reference Only
FMOSB122N10-H
Package: TO-263; Type: N MOS; BVDSS (V): 100; ID (A): 122; PD (W): 192; EAS (mJ): 156; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.9m; RDSON1 Max.(Ω): 4.6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 4176; Qg Typ.(nC): 72.7; AEC-Q101 Qualified: No
Product Description
Package: TO-263; Type: N MOS; BVDSS (V): 100; ID (A): 122; PD (W): 192; EAS (mJ): 156; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.9m; RDSON1 Max.(Ω): 4.6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 4176; Qg Typ.(nC): 72.7; AEC-Q101 Qualified: No