Reference Only
FMOSAV12DN04-H
Package: T3333P8 Dual; Type: Dual N MOS; BVDSS (V): 40; ID (A): 12; PD (W): 15; EAS (mJ): 12; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 20m; RDSON1 Max.(Ω): 26m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 28m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 815; Qg Typ.(nC): 16; AEC-Q101 Qualified: No
Product Description
Package: T3333P8 Dual; Type: Dual N MOS; BVDSS (V): 40; ID (A): 12; PD (W): 15; EAS (mJ): 12; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 20m; RDSON1 Max.(Ω): 26m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 28m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 815; Qg Typ.(nC): 16; AEC-Q101 Qualified: No