Reference Only
FMOSAM07P8DN02E-H
Package: T2030P6; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7.8; PD (W): 0.98; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): 0.85; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6m; RDSON1 Max.(Ω): 8m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 5.5; RDSON2 Max.(Ω): 11m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 5.5; Ciss Typ.(pF): 1340; Qg Typ.(nC): 6; AEC-Q101 Qualified: No
Product Description
Package: T2030P6; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7.8; PD (W): 0.98; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): 0.85; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6m; RDSON1 Max.(Ω): 8m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 5.5; RDSON2 Max.(Ω): 11m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 5.5; Ciss Typ.(pF): 1340; Qg Typ.(nC): 6; AEC-Q101 Qualified: No