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Home Formosa Microsemi

FMOSAG45N06-H

FMOSAG45N06-H

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FMOSAG45N06-H

Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 45; PD (W): 60; EAS (mJ): 180; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7.5m; RDSON1 Max.(Ω): 9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 25; RDSON2 Typ.(Ω): 9.8m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 25; Ciss Typ.(pF): 1480; Qg Typ.(nC): 23; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 45; PD (W): 60; EAS (mJ): 180; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7.5m; RDSON1 Max.(Ω): 9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 25; RDSON2 Typ.(Ω): 9.8m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 25; Ciss Typ.(pF): 1480; Qg Typ.(nC): 23; AEC-Q101 Qualified: No

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