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FMOSAG2730

FMOSAG2730

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FMOSAG2730

Package: T3030P8; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7; PD (W): 1.47; IDSS @VDSS(V): 16; IDSS Max.(uA): 25; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 14.5m; RDSON1 Max.(Ω): 17m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 27m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 735; Qg Typ.(nC): 9.86; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3030P8; Type: Dual N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7; PD (W): 1.47; IDSS @VDSS(V): 16; IDSS Max.(uA): 25; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 14.5m; RDSON1 Max.(Ω): 17m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 27m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 735; Qg Typ.(nC): 9.86; AEC-Q101 Qualified: No

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