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Home Formosa Microsemi

FMOSAE0P75N02E-H

FMOSAE0P75N02E-H

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FMOSAE0P75N02E-H

Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.75; PD (W): 0.275; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±20; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): 1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 250m; RDSON1 Max.(Ω): 500m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.15; RDSON2 Typ.(Ω): 1.2; RDSON2 @VGS(V): 1.2; RDSON2 @ID(A): 0.01; Ciss Typ.(pF): 79

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.75; PD (W): 0.275; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±20; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): 1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 250m; RDSON1 Max.(Ω): 500m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.15; RDSON2 Typ.(Ω): 1.2; RDSON2 @VGS(V): 1.2; RDSON2 @ID(A): 0.01; Ciss Typ.(pF): 79

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Formosa Microsemi
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