Reference Only
FMOSAE0P75N02E-H
N-Channel Power MOSFET, 20V, 75A, DFN3.3x3.3
Datasheet
FMOSAE0P75N02E-H Datasheet
Product Description
The FMOSAE0P75N02E-H, manufactured by Formosa Microsemi, is a robust N-Channel Power MOSFET designed for efficient power management. With a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 75A, this MOSFET delivers exceptional performance in a variety of applications. Its low on-resistance minimizes power loss, enhancing overall system efficiency. The compact DFN3.3x3.3 surface-mount package allows for high-density board layouts. Supreme Components International is an authorised distributor of Formosa Microsemi components, ensuring you receive genuine, high-quality products. This MOSFET is suitable for DC-DC converters, load switching, and other power control circuits. Benefit from its reliability and performance in your next design.
Technical Specifications
| Attribute | Description |
|---|---|
| Gate Charge | 14 nanoCoulombs |
| Package Type | DFN 3.3 by 3.3 |
| Mounting Type | Surface Mount |
| Polarity Type | N Channel |
| Current Rating | 75 Amperes |
| Voltage Rating | 20 Volts |
| Drain Source On Resistance | 2.8 milliohms at GateSourceVoltage equals 4.5 Volts |
| Operating Temperature Range | Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature) |
Ordering Information
| Attribute | Description |
|---|---|
| Packaging Type | Tape And Reel |