Reference Only
FMOSAE0P66P02K-H
Package: T1006P3; ESD: Yes; BVDSS (V): -20; ID (A): -0.66; PD (W): 0.275; IDSS @VDSS(V): -20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): -1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 450m; RDSON1 Max.(Ω): 520m; RDSON1 @VGS(V): -4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 950m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): -0.5; Ciss Typ.(pF): 113; AEC-Q101 Qualified: No
Product Description
Package: T1006P3; ESD: Yes; BVDSS (V): -20; ID (A): -0.66; PD (W): 0.275; IDSS @VDSS(V): -20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.35; VGS(th) Max.(V): -1.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 450m; RDSON1 Max.(Ω): 520m; RDSON1 @VGS(V): -4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 950m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): -0.5; Ciss Typ.(pF): 113; AEC-Q101 Qualified: No