Reference Only
FMOSAE01N03E-H
Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 1; PD (W): 0.69; EAS (mJ): 0.16; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.6; VGS(th) Max.(V): 1.3; VGS(th) @ID(mA): 0.25; 540m: 350m; RDSON1 Max.(Ω): 420m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.5; RDSON2 Typ.(Ω): 740m; RDSON2 Max.(Ω): 850m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.1; Ciss Typ.(pF): 38.1; Qg Typ.(nC): 0.85; AEC-Q101 Qualified: No
Product Description
Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 1; PD (W): 0.69; EAS (mJ): 0.16; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.6; VGS(th) Max.(V): 1.3; VGS(th) @ID(mA): 0.25; 540m: 350m; RDSON1 Max.(Ω): 420m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.5; RDSON2 Typ.(Ω): 740m; RDSON2 Max.(Ω): 850m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.1; Ciss Typ.(pF): 38.1; Qg Typ.(nC): 0.85; AEC-Q101 Qualified: No