Reference Only
FMOSAC53N03-H
Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 53; PD (W): 32; EAS (mJ): 22; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 7.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Typ.(Ω): 8.2m; RDSON2 Max.(Ω): 10.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 6; Ciss Typ.(pF): 1094; Qg Typ.(nC): 16; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 53; PD (W): 32; EAS (mJ): 22; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 7.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Typ.(Ω): 8.2m; RDSON2 Max.(Ω): 10.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 6; Ciss Typ.(pF): 1094; Qg Typ.(nC): 16; AEC-Q101 Qualified: No