Reference Only
FMOSAC31DN10-H
Package: T5060P8 Dual; Type: Dual N MOS; BVDSS (V): 100; ID (A): 31; PD (W): 39; EAS (mJ): 29; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 21m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 769; Qg Typ.(nC): 12.7; AEC-Q101 Qualified: No
Product Description
Package: T5060P8 Dual; Type: Dual N MOS; BVDSS (V): 100; ID (A): 31; PD (W): 39; EAS (mJ): 29; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 21m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 769; Qg Typ.(nC): 12.7; AEC-Q101 Qualified: No