Reference Only
FMOSAC25N06-H
Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 25; PD (W): 35; EAS (mJ): 13.5; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 28m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 28m; RDSON2 Max.(Ω): 37m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 288; Qg Typ.(nC): 5.8; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 25; PD (W): 35; EAS (mJ): 13.5; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 22m; RDSON1 Max.(Ω): 28m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 28m; RDSON2 Max.(Ω): 37m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 288; Qg Typ.(nC): 5.8; AEC-Q101 Qualified: No