Reference Only
FMOSAC132N12-H
Package: T5060P8; Type: N MOS; BVDSS (V): 120; ID (A): 132; PD (W): 125; EAS (mJ): 65; IDSS @VDSS(V): 96; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6m; RDSON1 Max.(Ω): 7.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 8.0m; RDSON2 Max.(Ω): 10.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 4849; Qg Typ.(nC): 47; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 120; ID (A): 132; PD (W): 125; EAS (mJ): 65; IDSS @VDSS(V): 96; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6m; RDSON1 Max.(Ω): 7.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 8.0m; RDSON2 Max.(Ω): 10.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 4849; Qg Typ.(nC): 47; AEC-Q101 Qualified: No