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Home Formosa Microsemi

FMOSAC112N06-Q1-H

FMOSAC112N06-Q1-H

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FMOSAC112N06-Q1-H

Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 112; PD (W): 100; EAS (mJ): 94; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.6m; RDSON1 Max.(Ω): 4.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 4.7m; RDSON2 Max.(Ω): 5.9m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 2030; Qg Typ.(nC): 32; AEC-Q101 Qualified: Yes

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 112; PD (W): 100; EAS (mJ): 94; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.6m; RDSON1 Max.(Ω): 4.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 4.7m; RDSON2 Max.(Ω): 5.9m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 2030; Qg Typ.(nC): 32; AEC-Q101 Qualified: Yes

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