Reference Only
FMOSAB68N08-H
Package: T3333P8; Type: N MOS; BVDSS (V): 80; ID (A): 68; PD (W): 35.7; EAS (mJ): 56; IDSS @VDSS(V): 65; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.4m; RDSON1 Max.(Ω): 7.7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 10m; RDSON2 Max.(Ω): 13m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1692; Qg Typ.(nC): 35; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 80; ID (A): 68; PD (W): 35.7; EAS (mJ): 56; IDSS @VDSS(V): 65; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.4m; RDSON1 Max.(Ω): 7.7m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 10m; RDSON2 Max.(Ω): 13m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1692; Qg Typ.(nC): 35; AEC-Q101 Qualified: No