Reference Only
FMOSAB60N02-H
Package: T3333P8; Type: N MOS; BVDSS (V): 20; ID (A): 60; PD (W): 39; EAS (mJ): 121; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.0m; RDSON1 Max.(Ω): 3.9m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3.9; RDSON2 Typ.(Ω): 3.8m; RDSON2 Max.(Ω): 4.9m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 3476; Qg Typ.(nC): 65; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 20; ID (A): 60; PD (W): 39; EAS (mJ): 121; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 3.0m; RDSON1 Max.(Ω): 3.9m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3.9; RDSON2 Typ.(Ω): 3.8m; RDSON2 Max.(Ω): 4.9m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 3476; Qg Typ.(nC): 65; AEC-Q101 Qualified: No