Reference Only
FMOSAB59N04-Q1-H
Package: T3333P8; Type: N MOS; BVDSS (V): 40; ID (A): 59; PD (W): 37; EAS (mJ): 96; IDSS @VDSS(V): 32; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 3.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.8m; RDSON1 Max.(Ω): 6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 1032; Qg Typ.(nC): 15.4; AEC-Q101 Qualified: Yes
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 40; ID (A): 59; PD (W): 37; EAS (mJ): 96; IDSS @VDSS(V): 32; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 3.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.8m; RDSON1 Max.(Ω): 6m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; Ciss Typ.(pF): 1032; Qg Typ.(nC): 15.4; AEC-Q101 Qualified: Yes