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FMOSAB49N10-H
Package: T3333P8; Type: N MOS; BVDSS (V): 100; ID (A): 49; PD (W): 36; EAS (mJ): 36; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7.6m; RDSON1 Max.(Ω): 9.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 11m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5m; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1915; Qg Typ.(nC): 22.1; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 100; ID (A): 49; PD (W): 36; EAS (mJ): 36; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7.6m; RDSON1 Max.(Ω): 9.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 11m; RDSON2 Max.(Ω): 14m; RDSON2 @VGS(V): 4.5m; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1915; Qg Typ.(nC): 22.1; AEC-Q101 Qualified: No