Reference Only
FMOSAB43N03-H
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 43; PD (W): 26; EAS (mJ): 8.5; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 8.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 10.6m; RDSON2 Max.(Ω): 13.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 468; Qg Typ.(nC): 7.7; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 43; PD (W): 26; EAS (mJ): 8.5; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 8.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 10.6m; RDSON2 Max.(Ω): 13.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 468; Qg Typ.(nC): 7.7; AEC-Q101 Qualified: No