Reference Only
FMOSAB3006B-H
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 40; PD (W): 35; EAS (mJ): 64; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.7m; RDSON1 Max.(Ω): 6.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.4m; RDSON2 Max.(Ω): 9.6m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1788; Qg Typ.(nC): 34; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 40; PD (W): 35; EAS (mJ): 64; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.7m; RDSON1 Max.(Ω): 6.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.4m; RDSON2 Max.(Ω): 9.6m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1788; Qg Typ.(nC): 34; AEC-Q101 Qualified: No