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Home Formosa Microsemi

FMOSAB25N03-H

FMOSAB25N03-H

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FMOSAB25N03-H

Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 25; PD (W): 9.6; EAS (mJ): 23; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 10.5m; RDSON2 Max.(Ω): 14.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1011; Qg Typ.(nC): 19; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 25; PD (W): 9.6; EAS (mJ): 23; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 9m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 10.5m; RDSON2 Max.(Ω): 14.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1011; Qg Typ.(nC): 19; AEC-Q101 Qualified: No

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