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Home Formosa Microsemi

FMOSAB12N03-H

FMOSAB12N03-H

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FMOSAB12N03-H

Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 12; PD (W): 4.8; EAS (mJ): 11; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 15m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 490; Qg Typ.(nC): 5.2; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 12; PD (W): 4.8; EAS (mJ): 11; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 15m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 490; Qg Typ.(nC): 5.2; AEC-Q101 Qualified; No

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