Reference Only
FMOSAB10N10-H
Package: T3333P8; Type: N MOS; BVDSS (V): 100; ID (A): 10; PD (W): 20; EAS (mJ): 3.8; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.5; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 92m; RDSON1 Max.(Ω): 120m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 98m; RDSON2 Max.(Ω): 137m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 811; Qg Typ.(nC): 12; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 100; ID (A): 10; PD (W): 20; EAS (mJ): 3.8; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.5; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 92m; RDSON1 Max.(Ω): 120m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 98m; RDSON2 Max.(Ω): 137m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 811; Qg Typ.(nC): 12; AEC-Q101 Qualified: No