Reference Only
FMOS1012T-H
Package: SOT-523; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.63; PD (W): 0.28; IDSS @VDSS(V): 20; IDSS Max.(uA): 0.1; IGSS VGS(V): ±4.5; IGSS Max.(uA): ±1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.3; RDSON1 Max.(Ω): 0.4; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 0.5; RDSON2 Max.(Ω): 0.7; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 60.67; Qg Typ.(nC): 0.736; AEC-Q101 Qualified: No
Product Description
Package: SOT-523; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 0.63; PD (W): 0.28; IDSS @VDSS(V): 20; IDSS Max.(uA): 0.1; IGSS VGS(V): ±4.5; IGSS Max.(uA): ±1; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.3; RDSON1 Max.(Ω): 0.4; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.6; RDSON2 Typ.(Ω): 0.5; RDSON2 Max.(Ω): 0.7; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 60.67; Qg Typ.(nC): 0.736; AEC-Q101 Qualified: No