Reference Only
FMOS07P5N02E-H
Package: SOT-23; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7.5; PD (W): 1.1; EAS (mJ): 8.5; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 0.9; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 4; RDSON2 Typ.(Ω): 24m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 1; Ciss Typ.(pF): 702; Qg Typ.(nC): 4.7; AEC-Q101 Qualified: No
Product Description
Package: SOT-23; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 7.5; PD (W): 1.1; EAS (mJ): 8.5; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 0.9; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 4; RDSON2 Typ.(Ω): 24m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 1; Ciss Typ.(pF): 702; Qg Typ.(nC): 4.7; AEC-Q101 Qualified: No