Reference Only
FMOS02P2N06-H
Package: SOT-23; Type: N MOS; BVDSS (V): 60; ID (A): 2.2; PD (W): 0.9; EAS (mJ): 6.3; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 75m; RDSON1 Max.(Ω): 100m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2.5; RDSON2 Typ.(Ω): 85m; RDSON2 Max.(Ω): 119m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 2; Ciss Typ.(pF): 355; Qg Typ.(nC): 9; AEC-Q101 Qualified: No
Product Description
Package: SOT-23; Type: N MOS; BVDSS (V): 60; ID (A): 2.2; PD (W): 0.9; EAS (mJ): 6.3; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 75m; RDSON1 Max.(Ω): 100m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2.5; RDSON2 Typ.(Ω): 85m; RDSON2 Max.(Ω): 119m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 2; Ciss Typ.(pF): 355; Qg Typ.(nC): 9; AEC-Q101 Qualified: No