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Home Formosa Microsemi

FMNN3416E-H

FMNN3416E-H

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FMNN3416E-H

Package: SOT-23; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 6; PD (W): 0.9; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 26m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 545; Qg Typ.(nC): 8

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 6; PD (W): 0.9; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±10; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 5; RDSON2 Typ.(Ω): 26m; RDSON2 Max.(Ω): 36m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 545; Qg Typ.(nC): 8

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Formosa Microsemi
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