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CGD65D025SP2
Manufacturer Cambridge GaN Devices
Short Description 650V, 25mOhm GaN HEMT
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
11 nanocoulombs
Packagetype
DFN8x8
Drainsourcevoltage
650 volts
Continuousdraincurrent
27 amperes
Drainsourceonresistance
25 milliohms
Operatingtemperaturerange
Negative 55 degrees Celsius to Positive 150 degrees Celsius

Full Description

The CGD65D025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This 650V, 25mOhm GaN HEMT leverages the superior material properties of Gallium Nitride (GaN) to deliver exceptional performance. As an authorised distributor, Supreme Components International ensures you receive genuine components with full traceability. This GaN MOSFET offers significantly faster switching speeds and lower on-resistance compared to silicon-based MOSFETs, resulting in reduced power losses and improved efficiency. It is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Its compact size and high power density make it an excellent choice for space-constrained designs. Explore the benefits of GaN technology with the CGD65D025SP2.

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