Cambridge GaN Devices Logo
Manufacturer Part Number (MPN) CGD65D025SP2
Manufacturer Cambridge GaN Devices
Short Description 650V, 25mOhm GaN HEMT
Datasheet 📄 Datasheet

Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
11 nanocoulombs
Package Type
DFN8x8
Drain Source Voltage
650 volts
Continuous Drain Current
27 amperes
Drain Source On Resistance
25 milliohms
Operating Temperature Range
Negative 55 degrees Celsius to Positive 150 degrees Celsius

Full Description

The CGD65D025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This 650V, 25mOhm GaN HEMT leverages the superior material properties of Gallium Nitride (GaN) to deliver exceptional performance. As an authorised distributor, Supreme Components International ensures you receive genuine components with full traceability. This GaN MOSFET offers significantly faster switching speeds and lower on-resistance compared to silicon-based MOSFETs, resulting in reduced power losses and improved efficiency. It is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Its compact size and high power density make it an excellent choice for space-constrained designs. Explore the benefits of GaN technology with the CGD65D025SP2.

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Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

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