Reference Only
CGD65D025SP2
650V, 25mOhm GaN HEMT
Manufacturer:
Cambridge GaN DevicesSub Category:
OTHER
Datasheet
CGD65D025SP2 Datasheet
Product Description
The CGD65D025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This 650V, 25mOhm GaN HEMT leverages the superior material properties of Gallium Nitride (GaN) to deliver exceptional performance. As an authorised distributor, Supreme Components International ensures you receive genuine components with full traceability. This GaN MOSFET offers significantly faster switching speeds and lower on-resistance compared to silicon-based MOSFETs, resulting in reduced power losses and improved efficiency. It is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Its compact size and high power density make it an excellent choice for space-constrained designs. Explore the benefits of GaN technology with the CGD65D025SP2.
Technical Specifications
| Attribute | Description |
|---|---|
| Gate Charge | 11 nanocoulombs |
| Package Type | DFN8x8 |
| Drain Source Voltage | 650 volts |
| Continuous Drain Current | 27 amperes |
| Drain Source On Resistance | 25 milliohms |
| Operating Temperature Range | Negative 55 degrees Celsius to Positive 150 degrees Celsius |