CGD65D025SP2

CGD65D025SP2

650V, 25mOhm GaN HEMT

Product Category
GaN transistors

PRODUCT DETAILS

Product Description

The CGD65D025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This 650V, 25mOhm GaN HEMT leverages the superior material properties of Gallium Nitride (GaN) to deliver exceptional performance. As an authorised distributor, Supreme Components International ensures you receive genuine components with full traceability. This GaN MOSFET offers significantly faster switching speeds and lower on-resistance compared to silicon-based MOSFETs, resulting in reduced power losses and improved efficiency. It is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Its compact size and high power density make it an excellent choice for space-constrained designs. Explore the benefits of GaN technology with the CGD65D025SP2.

Product Tags

Technical Specifications

Gate charge 11 nanocoulombs
Package type DFN8x8
Drain source voltage 650 volts
Continuous drain current 27 amperes
Drain source on resistance 25 milliohms
Operating temperature range Negative 55 degrees Celsius to Positive 150 degrees Celsius
Ships in: 1 day

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