CGD65C025SP2
650V, 25mOhm Enhancement mode GaN transistor in DFN8x8 package
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Product Description
The CGD65C025SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International offers this 650V, 25mOhm enhancement mode GaN transistor, designed for high-efficiency power conversion. Housed in a compact DFN8x8 package, this GaN MOSFET delivers exceptional performance with fast switching speeds and reduced on-resistance. This device is perfect for applications such as power supplies, inverters, and motor drives where efficiency and power density are critical. Benefit from the superior characteristics of GaN technology, including lower switching losses and improved thermal performance. Choose the CGD65C025SP2 for your next-generation power design.
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Technical Specifications
| Technology | Gallium Nitride |
|---|---|
| Gate charge | 14 nC |
| Package type | DFN8x8 |
| Voltage rating | 650V |
| Total gate charge | 7.5 nC |
| Drain source on resistance | 25 mOhm |
| Operating temperature range | -55°C to +150°C |
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