Cambridge GaN Devices Logo
Manufacturer Part Number (MPN) CGD65B200S2
Manufacturer Cambridge GaN Devices
Short Description 650V, 200mOhm, Enhancement mode GaN transistor
Datasheet 📄 Datasheet

Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Gallium Nitride
Gate Charge
11 nC
Package Type
DFN8x8
Voltage Rating
650 Volts
Maximum Drain Current
14 Amperes
Gate Threshold Voltage
1.6 Volts
Drain Source On Resistance
200 mOhm
Operating Temperature Range
-55 Degrees Celsius to +150 Degrees Celsius

Ordering Information

Parameter
Value
Packaging Type
TRAY

Full Description

The CGD65B200S2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 200mOhm, enabling efficient power conversion. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. GaN MOSFETs offer superior switching performance, reduced power losses, and higher power density compared to silicon-based alternatives. This device is well-suited for applications such as AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its fast switching capabilities minimize switching losses, leading to improved overall system efficiency and reduced heat dissipation. Explore the potential of GaN technology with the CGD65B200S2 and unlock new possibilities in power electronics design.

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Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

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