CGD65B200S2
650V, 200mOhm, Enhancement mode GaN transistor
PRODUCT DETAILS
Product Description
The CGD65B200S2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 200mOhm, enabling efficient power conversion. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. GaN MOSFETs offer superior switching performance, reduced power losses, and higher power density compared to silicon-based alternatives. This device is well-suited for applications such as AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its fast switching capabilities minimize switching losses, leading to improved overall system efficiency and reduced heat dissipation. Explore the potential of GaN technology with the CGD65B200S2 and unlock new possibilities in power electronics design.
Product Tags
Technical Specifications
| Technology | Gallium Nitride |
|---|---|
| Gate charge | 11 nC |
| Package type | DFN8x8 |
| Voltage rating | 650 Volts |
| Maximum drain current | 14 Amperes |
| Gate threshold voltage | 1.6 Volts |
| Drain source on resistance | 200 mOhm |
| Operating temperature range | -55 Degrees Celsius to +150 Degrees Celsius |
Ordering Information
| Packaging Type | Tray |
|---|
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1 day
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