CGD65B130SH2

650V GaN transistor

The CGD65B130SH2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International offers this 650V, 130mOhm enhancement mode GaN transistor designed for high-efficiency applications. Encased in a small DFN8x8 package, this GaN MOSFET provides exceptional power density and switching characteristics. Its superior performance makes it suitable for a wide range of applications, including AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Benefit from reduced switching losses, improved thermal management, and increased system efficiency with this state-of-the-art GaN transistor. Choose the CGD65B130SH2 for your next power design and experience the advantages of GaN technology.

Product Categories

GaN transistors

Specifications

Parameter Value
Gatecharge 11 nC
Technology Gallium Nitride
Packagetype DFN8x8
Voltagerating 650 Volts
Totalgatecharge 11 nC
Inputcapacitance 500 pF
Outputcapacitance 40 pF
Drainsourceonresistance 130 mOhm
Operatingtemperaturerange -55 Degrees Celsius to +150 Degrees Celsius

Datasheet

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