
The CGD65B130SH2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International offers this 650V, 130mOhm enhancement mode GaN transistor designed for high-efficiency applications. Encased in a small DFN8x8 package, this GaN MOSFET provides exceptional power density and switching characteristics. Its superior performance makes it suitable for a wide range of applications, including AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Benefit from reduced switching losses, improved thermal management, and increased system efficiency with this state-of-the-art GaN transistor. Choose the CGD65B130SH2 for your next power design and experience the advantages of GaN technology.
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Specifications
Parameter | Value |
---|---|
Gatecharge | 11 nC |
Technology | Gallium Nitride |
Packagetype | DFN8x8 |
Voltagerating | 650 Volts |
Totalgatecharge | 11 nC |
Inputcapacitance | 500 pF |
Outputcapacitance | 40 pF |
Drainsourceonresistance | 130 mOhm |
Operatingtemperaturerange | -55 Degrees Celsius to +150 Degrees Celsius |