
The CGD65A130SH2, manufactured by Cambridge GaN Devices, represents a significant advancement in power transistor technology. As an authorised distributor, Supreme Components International offers this high-performance 650V GaN MOSFET. Featuring a low on-resistance of 130mOhm, this enhancement mode transistor minimizes conduction losses, leading to improved efficiency. Its GaN-based design enables faster switching speeds and reduced switching losses compared to traditional silicon MOSFETs. The compact DFN8x8 package allows for high power density and efficient thermal management. This device is well-suited for applications such as power supplies, inverters, and motor drives where efficiency and power density are critical. Benefit from the superior performance and reliability of GaN technology with the CGD65A130SH2.
Product Categories
Specifications
Parameter | Value |
---|---|
Identifier | 20A |
Technology | Gallium Nitride |
Gate Charge | 11 nanoCoulombs |
Package Type | DFN8x8 |
Voltage Rating | 650 Volts |
Total Gate Charge | 11 nanoCoulombs |
Total Power Dissipation | 69 Watts |
Drain Source On Resistance | 130 milliOhms |
Operating Temperature Range | Negative 55 to 150 degrees Celsius |
Ordering Information
Parameter | Value |
---|---|
Packaging Type | TAPE_AND_REEL |