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CGD65A130S2
Manufacturer Cambridge GaN Devices
Short Description 650V, 130mOhm enhancement mode GaN transistor
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
8.3 nC
Packagetype
DFN8x8
Drainsourcevoltage
650V
Continuousdraincurrent
24A
Drainsourceonresistance
130 mOhm
Operatingtemperaturerange
-55°C to +150°C

Full Description

The CGD65A130S2 is a 650V, 130mOhm enhancement mode GaN transistor from Cambridge GaN Devices. Supreme Components International is an authorised distributor, ensuring you receive genuine components. This GAN_MOSFET offers significant advantages over silicon MOSFETs, including lower on-resistance, faster switching speeds, and reduced gate charge. These features contribute to higher efficiency and improved power density in various applications. This GaN transistor is suitable for use in power supplies, solar inverters, motor drives, and other high-power applications where efficiency and performance are critical. Its superior characteristics enable smaller and lighter designs with improved thermal performance. Explore the benefits of GaN technology with the CGD65A130S2.

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