SKM600GB12M7
$0.00
Chip Technology: IGBT M7; Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: VCE(sat) with positive temperature coefficient, High overload capability, Low loss high density IGBT´s, Fast & soft switching inverse CAL diodes, Large clearance (10 mm) and creepage distances (20 mm), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22894300; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GB12M7; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Solar energy, Energy storage; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Description
Chip Technology: IGBT M7; Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: VCE(sat) with positive temperature coefficient, High overload capability, Low loss high density IGBT´s, Fast & soft switching inverse CAL diodes, Large clearance (10 mm) and creepage distances (20 mm), Insulated copper baseplate using DBC Technology (Direct Bonded Copper), UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22894300; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GB12M7; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Solar energy, Energy storage; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3