SKM600GAL12E4H20
$0.00
Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4th generation medium fast trench IGBT (Infineon), CAL4 = Soft switching 4th generation CAL-diode, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, For higher switching frequencies up to 12kHz, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22892270; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GAL12E4H20; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: UPS; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Description
Chip Technology: IGBT 4 (Trench); Current (A): 600 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: IGBT4 = 4th generation medium fast trench IGBT (Infineon), CAL4 = Soft switching 4th generation CAL-diode, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, For higher switching frequencies up to 12kHz, UL recognized, file no. E63532; Housing: SEMITRANS 3; Part Number: 22892270; Product Line: SEMITRANS; Product Status: In production new; Product Type: SKM600GAL12E4H20; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: UPS; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3