SKM200GB12V
$0.00
Chip Technology: V-IGBT; Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: V-IGBT = 6. Generation Trench V-IGBT (Fuji), CAL4 = Soft switching 4. Generation CAL-diode, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, UL recognized, file no. E63532, Lowest switching losses at High di/dt; Housing: SEMITRANS 3; Part Number: 22892064; Product Line: SEMITRANS; Product Status: In production; Product Type: SKM200GB12V; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Electronic welders; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Description
Chip Technology: V-IGBT; Current (A): 200 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: V-IGBT = 6. Generation Trench V-IGBT (Fuji), CAL4 = Soft switching 4. Generation CAL-diode, Insulated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, UL recognized, file no. E63532, Lowest switching losses at High di/dt; Housing: SEMITRANS 3; Part Number: 22892064; Product Line: SEMITRANS; Product Status: In production; Product Type: SKM200GB12V; Switches: Half-Bridge; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Electronic welders; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3