SKM200GAR125D
$0.00
Chip Technology: NPT IGBT (Ultrafast); Current (A): 150 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: N channel , homogeneous Si, Low inductance case, Short tail current with low temperature dependence, High short circuit capability, self limiting to 6 x Icnom, Fast & soft inverse CAL diodes, Isolated copper baseplate using DCB Direct Copper Bonding Technology, Large clearance (13 mm) and creepage distance (20 mm); Housing: SEMITRANS 3; Part Number: 22890565; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM200GAR125D; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: Switched mode power supplies at fsw > 20 kHz, Resonant inverters up to 100 kHz, Inductive heating, Electronic welders at fsw > 20 kHz; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3
Description
Chip Technology: NPT IGBT (Ultrafast); Current (A): 150 A; Dimensions (LLxBBxHH) mm: 106x62x31; Features: N channel , homogeneous Si, Low inductance case, Short tail current with low temperature dependence, High short circuit capability, self limiting to 6 x Icnom, Fast & soft inverse CAL diodes, Isolated copper baseplate using DCB Direct Copper Bonding Technology, Large clearance (13 mm) and creepage distance (20 mm); Housing: SEMITRANS 3; Part Number: 22890565; Product Line: SEMITRANS; Product Status: Not for new designs; Product Type: SKM200GAR125D; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: Switched mode power supplies at fsw > 20 kHz, Resonant inverters up to 100 kHz, Inductive heating, Electronic welders at fsw > 20 kHz; Voltage (V): 1200 V; Product Line: SEMITRANS; Product Description: SEMITRANS 3