Reference Only
SK250MB120CR03TE2
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 267 A; Dimensions (LLxBBxHH) mm: 63x57x12; Features: Optimized design for superior thermal performance, Extremely low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOSFET, Simple to drive with +15V gate voltage, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E2; Part Number: 24922590; Product Line: SEMITOP; Product Status: In production new; Product Type: SK250MB120CR03TE2; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: Switched Mode Power Supplies, Energy Storage Systems, Electric Vehicle charging, UPS, Solar, Motor Drives; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E2
Product Description
Chip Technology: Gen 3 SiC MOSFET (WS); Current (A): 267 A; Dimensions (LLxBBxHH) mm: 63x57x12; Features: Optimized design for superior thermal performance, Extremely low inductance design, Press-Fit contact technology, 1200V Planar Gen3 SiC MOSFET, Simple to drive with +15V gate voltage, Optimized switching stability thanks to module integrated gate resistors, Integrated NTC temperature sensor, UL recognized file no. E 63 532; Housing: SEMITOP E2; Part Number: 24922590; Product Line: SEMITOP; Product Status: In production new; Product Type: SK250MB120CR03TE2; Switches: Half-Bridge; Technology: SiC MOSFET; Typical Applications: Switched Mode Power Supplies, Energy Storage Systems, Electric Vehicle charging, UPS, Solar, Motor Drives; Voltage (V): 1200 V; Product Line: SEMITOP; Product Description: SEMITOP E2