
SEMiX302GAL17E4s
$0.00
Chip Technology: IGBT 4 (Trench); Current (A): 300 A; Dimensions (LLxBBxHH) mm: 117x64x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, UL recognized, file no. E63532; Housing: SEMiX 2s; Part Number: 27892120; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX302GAL17E4s; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Electronic Welding; Voltage (V): 1700 V; Product Line: SEMiX; Product Description: SEMiX 2s
Description
Chip Technology: IGBT 4 (Trench); Current (A): 300 A; Dimensions (LLxBBxHH) mm: 117x64x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, High short circuit capability, UL recognized, file no. E63532; Housing: SEMiX 2s; Part Number: 27892120; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX302GAL17E4s; Switches: Chopper/Booster; Technology: IGBT; Typical Applications: AC inverter drives, UPS, Electronic Welding; Voltage (V): 1700 V; Product Line: SEMiX; Product Description: SEMiX 2s