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SEMiX202GB066HDs

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Chip Technology: IGBT 3 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 117x64x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, UL recognised file no. E63532; Housing: SEMiX 2s; Part Number: 27891110; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX202GB066HDs; Switches: Half-Bridge; Technology: IGBT; Typical Applications: Matrix Converter, Resonant Inverter, Current Source Inverter; Voltage (V): 600 V; Product Line: SEMiX; Product Description: SEMiX 2s

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Description

Chip Technology: IGBT 3 (Trench); Current (A): 200 A; Dimensions (LLxBBxHH) mm: 117x64x17; Features: Homogeneous Si, Trench = Trenchgate technology, VCE(sat) with positive temperature coefficient, UL recognised file no. E63532; Housing: SEMiX 2s; Part Number: 27891110; Product Line: SEMiX; Product Status: In production; Product Type: SEMiX202GB066HDs; Switches: Half-Bridge; Technology: IGBT; Typical Applications: Matrix Converter, Resonant Inverter, Current Source Inverter; Voltage (V): 600 V; Product Line: SEMiX; Product Description: SEMiX 2s

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