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Home Formosa Microsemi

SCSB8A650E

SCSB8A650E

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SCSB8A650E

Package: TO-252; IF1 (A): 24; IF1@TC1(℃): 25; IF2 (A): 11; IF2@TC2(℃): 135; IF3 (A): 8; IF3@TC3(℃): 153; VR (V): 650; IFMS (A): 72; VF1 Typ.(V) @IF @TJ = 25℃: 1.4; VF1 Max.(V) @IF @TJ = 25℃: 1.65; VF2 Typ.(V) @IF @TJ = 175℃: 1.7; VF2 Max.(V) @IF @TJ = 175℃: 2.3; IF (A): 8; IR1 Typ.(uA) @VR @TJ = 25℃: 1; IR1 Max.(uA) @VR @TJ = 25℃: 20; IR2 Typ.(uA) @VR @TJ = 175℃: 5; IR2 Max.(uA) @VR @TJ = 25℃: 100; VR (V): 650; VθJC Typ.(℃/W): 1.4; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
Schottky Diodes
Formosa Microsemi

Product Description

Package: TO-252; IF1 (A): 24; IF1@TC1(℃): 25; IF2 (A): 11; IF2@TC2(℃): 135; IF3 (A): 8; IF3@TC3(℃): 153; VR (V): 650; IFMS (A): 72; VF1 Typ.(V) @IF @TJ = 25℃: 1.4; VF1 Max.(V) @IF @TJ = 25℃: 1.65; VF2 Typ.(V) @IF @TJ = 175℃: 1.7; VF2 Max.(V) @IF @TJ = 175℃: 2.3; IF (A): 8; IR1 Typ.(uA) @VR @TJ = 25℃: 1; IR1 Max.(uA) @VR @TJ = 25℃: 20; IR2 Typ.(uA) @VR @TJ = 175℃: 5; IR2 Max.(uA) @VR @TJ = 25℃: 100; VR (V): 650; VθJC Typ.(℃/W): 1.4; AEC-Q101 Qualified: No

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Formosa Microsemi
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