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Home Formosa Microsemi

SCSB4A650E

SCSB4A650E

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SCSB4A650E

Package: TO-252; IF1@TC1(℃): 25; IF2 (A): 8; IF2@TC2(℃): 135; IF3 (A): 4; IF3@TC3(℃): 160; VR (V): 650; IFMS (A): 32; VF1 Typ.(V) @IF @TJ = 25℃: 1.28; VF1 Max.(V) @IF @TJ = 25℃: 1.5; VF2 Typ.(V) @IF @TJ = 175℃: 1.4; VF2 Max.(V) @IF @TJ = 175℃: 1.6; IF (A): 4; IR1 Typ.(uA) @VR @TJ = 25℃: 4; IR1 Max.(uA) @VR @TJ = 25℃: 50; IR2 Typ.(uA) @VR @TJ = 175℃: 20; IR2 Max.(uA) @VR @TJ = 25℃: 200; VR (V): 650; VθJC Typ.(℃/W): 2.5; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
Schottky Diodes
Formosa Microsemi

Product Description

Package: TO-252; IF1@TC1(℃): 25; IF2 (A): 8; IF2@TC2(℃): 135; IF3 (A): 4; IF3@TC3(℃): 160; VR (V): 650; IFMS (A): 32; VF1 Typ.(V) @IF @TJ = 25℃: 1.28; VF1 Max.(V) @IF @TJ = 25℃: 1.5; VF2 Typ.(V) @IF @TJ = 175℃: 1.4; VF2 Max.(V) @IF @TJ = 175℃: 1.6; IF (A): 4; IR1 Typ.(uA) @VR @TJ = 25℃: 4; IR1 Max.(uA) @VR @TJ = 25℃: 50; IR2 Typ.(uA) @VR @TJ = 175℃: 20; IR2 Max.(uA) @VR @TJ = 25℃: 200; VR (V): 650; VθJC Typ.(℃/W): 2.5; AEC-Q101 Qualified: No

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Formosa Microsemi
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