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NV6512C
Manufacturer GeneSiC Semiconductor
Short Description 650V, 12A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-220-2
Maximum Voltage Rating
650 Volts
Typical Forward Voltage
1.45 Volts
Continuous Current Rating
12 Amperes
Peak Forward Surge Current
100 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

The NV6512C SiC Schottky Diode from GeneSiC Semiconductor represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International provides access to this cutting-edge technology. This 650V, 12A diode offers exceptional performance characteristics, including near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. Its silicon carbide (SiC) construction enables operation at higher frequencies and temperatures compared to silicon diodes, resulting in improved efficiency and reduced system size. Applications include power factor correction (PFC), motor drives, solar inverters, and electric vehicle charging stations. Choose the NV6512C for reliable and efficient power conversion.

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