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NV6511
Manufacturer GeneSiC Semiconductor
Short Description 650V, 11 mOhm SiC MOSFET from GeneSiC Semiconductor
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
65 nanocoulombs
Packagetype
TO-247-3
Drainsourcevoltage
650 volts
Continuousdraincurrent
68 amperes
Drainsourceonresistance
11 milliohms
Maximumjunctiontemperature
175 degrees Celsius

Full Description

The NV6511, manufactured by GeneSiC Semiconductor, is a cutting-edge 650V Silicon Carbide (SiC) MOSFET designed for high-efficiency power conversion. With an ultra-low on-resistance of 11 mOhm, this SIC_MOSFET minimizes conduction losses and maximizes overall system efficiency. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components. The NV6511 offers superior switching performance compared to traditional silicon MOSFETs, enabling higher operating frequencies and reduced cooling requirements. This MOSFET is ideal for applications such as solar inverters, electric vehicle chargers, and high-power SMPS. Its robust design and excellent thermal characteristics ensure reliable operation in demanding environments. Explore the benefits of SiC technology with the NV6511.

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