NV6511
650V, 11 mOhm SiC MOSFET from GeneSiC Semiconductor
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Product Description
The NV6511, manufactured by GeneSiC Semiconductor, is a cutting-edge 650V Silicon Carbide (SiC) MOSFET designed for high-efficiency power conversion. With an ultra-low on-resistance of 11 mOhm, this SIC_MOSFET minimizes conduction losses and maximizes overall system efficiency. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components. The NV6511 offers superior switching performance compared to traditional silicon MOSFETs, enabling higher operating frequencies and reduced cooling requirements. This MOSFET is ideal for applications such as solar inverters, electric vehicle chargers, and high-power SMPS. Its robust design and excellent thermal characteristics ensure reliable operation in demanding environments. Explore the benefits of SiC technology with the NV6511.
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Technical Specifications
| Gate charge | 65 nanocoulombs |
|---|---|
| Package type | TO-247-3 |
| Drain source voltage | 650 volts |
| Continuous drain current | 68 amperes |
| Drain source on resistance | 11 milliohms |
| Maximum junction temperature | 175 degrees Celsius |
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