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NV6247C
Manufacturer GeneSiC Semiconductor
Short Description 650V, 27mOhm SiC MOSFET
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
27 nC
Technology
Silicon Carbide MOSFET
Packagetype
D2PAK-7
Currentrating
36 Amperes
Voltagerating
650 Volts
Drainsourceonresistance
27 mOhm
Operatingtemperaturerange
-55 to 175 Degrees Celsius

Full Description

The NV6247C, manufactured by GeneSiC Semiconductor, is a cutting-edge 650V Silicon Carbide (SiC) MOSFET designed for high-efficiency power conversion. With an ultra-low on-resistance of 27mOhm, this SIC_MOSFET minimizes conduction losses, leading to improved overall system performance. The device is housed in a D2PAK-7 package, offering excellent thermal characteristics and ease of integration. This MOSFET is ideal for applications such as electric vehicle (EV) chargers, solar inverters, uninterruptible power supplies (UPS), and other high-power switching applications. Its superior switching speed and reduced reverse recovery charge contribute to higher efficiency and lower electromagnetic interference (EMI). Supreme Components International is an authorized distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of the NV6247C.

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