NV6169
650V GaN FET from GeneSiC Semiconductor. High-speed switching for efficient power conversion.
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Product Description
The NV6169 is a 650V GaN (Gallium Nitride) FET from GeneSiC Semiconductor, specifically engineered for high-speed switching performance. This enhancement mode device simplifies gate drive implementation, making it easier to integrate into existing designs. GaN technology offers significant advantages over traditional silicon MOSFETs, including lower on-resistance, reduced gate capacitance, and faster switching speeds. These characteristics contribute to higher efficiency and improved power density in applications such as power supplies, DC-DC converters, inverters, and motor drives. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of the NV6169. Benefit from the superior performance of GaN technology with this cutting-edge FET.
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Technical Specifications
| Technology | Gallium Nitride |
|---|---|
| Gate charge | 6.8 nC |
| Package type | DFN8x8 |
| Voltage rating | 650 Volts |
| Drain source on resistance | 240 mOhm |
| Operating temperature range | -55 Degrees Celsius to +150 Degrees Celsius |
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