NV6154
650V, 35mOhm GaN FET
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PRODUCT DETAILS
Product Description
The NV6154 is a high-performance 650V GaN FET from GeneSiC Semiconductor, designed for superior efficiency and power density. Featuring an exceptionally low on-resistance of just 35mOhm, the NV6154 minimizes conduction losses, enabling cooler operation and improved system reliability. Its compact DFN8x8 package makes it ideal for space-constrained applications. This GaN FET is perfect for use in high-frequency power converters, high-efficiency power supplies, and other demanding power applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive authentic, high-quality components with full manufacturer support. Benefit from the advanced performance of GaN technology with the NV6154.
Product Tags
Technical Specifications
| Identifier | 20A |
|---|---|
| Technology | Gallium Nitride |
| Gate charge | 12 nanoCoulombs |
| Package type | DFN8x8 |
| Voltage rating | 650 Volts |
| Total gate charge | 12 nanoCoulombs |
| Total power dissipation | 69 Watts |
| Drain source on resistance | 35 milliOhms |
| Operating temperature range | -55 to 150 degrees Celsius |
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