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NV6148C
Manufacturer GeneSiC Semiconductor
Short Description 650V, 150mOhm GaN-on-Si HEMT
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Identifier
17A
Technology
Gallium Nitride High Electron Mobility Transistor
Gate Charge
14 nanoCoulombs
Package Type
DFN8x8
Mounting Style
Surface Mount
Voltage Rating
650 Volts
Operating Temperature
Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature)
Drain Source On Resistance
150 milliOhms

Full Description

The NV6148C is a high-performance 650V, 150mOhm GaN-on-Si HEMT (High Electron Mobility Transistor) from GeneSiC Semiconductor. This GaN MOSFET offers superior switching performance and efficiency compared to traditional silicon MOSFETs, making it ideal for demanding power electronics applications. Applications include power supplies, inverters, and motor drives. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of this product. The NV6148C enables designers to achieve higher power densities and improved system efficiency. Explore the benefits of GaN technology with this advanced component. Supreme Components International provides comprehensive support and resources to help you integrate the NV6148C into your designs.

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